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参数资料
| 型号： | STGF10NB60SD |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 10A - 600V TO-220FP PowerMESH? IGBT |
| 中文描述： | N沟道10A条- 600V到- 220FP PowerMESH？ IGBT的 |
| 文件页数： | 8/8页 |
| 文件大小： | 325K |
| 代理商： | STGF10NB60SD |
STGF10NB60SD
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| STGP7NB60HD | N-CHANNEL 7A - 600V TO-220/FP PowerMESH IGBT |
| STGP7NB60KD | N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH⑩ IGBT |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STGF10NB60SD_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT |
| STGF10NC60HD | 功能描述:IGBT 晶体管 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| STGF10NC60KD | 功能描述:IGBT 晶体管 PowerMESH" IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| STGF10NC60KD_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT |
| STGF10NC60SD | 功能描述:IGBT 晶体管 10 A-600 V fast IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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