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参数资料
| 型号： | STGF7NB60SL |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL 7A - 600V - TO-220FP PowerMESH IGBT |
| 中文描述： | N沟道第7A - 600V的-对220FP PowerMESH IGBT的 |
| 文件页数： | 9/9页 |
| 文件大小： | 258K |
| 代理商： | STGF7NB60SL |
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STGF7NB60SL
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STGF7NB60SL_0409 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220FP PowerMESH TM IGBT |
| STGF7NC60HD | 功能描述:IGBT 晶体管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| STGF8NC60KD | 功能描述:IGBT 晶体管 N Ch 500V 0.40 11A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| STGFL6NC60D | 功能描述:IGBT 晶体管 N Ch 500V 0.250 Ohm 12A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| STGFL6NC60DI | 功能描述:IGBT 晶体管 6 A 600V HYPER FAST IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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