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参数资料
| 型号： | STM32F100R4T7BTR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PQFP64 |
| 封装： | 10 X 10 MM, ROHS COMPLIANT, LQFP-64 |
| 文件页数： | 50/86页 |
| 文件大小： | 1198K |
| 代理商： | STM32F100R4T7BTR |
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Electrical characteristics
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Doc ID 16455 Rev 3
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
●
A supply overvoltage is applied to each power supply pin
●
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD78 IC latch-up standard.
Table 30.
EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/24 MHz
SEMI
Peak level
VDD 3.6 V, TA 25°C,
LQFP100 package
compliant with SAE
J1752/3
0.1 MHz to 30 MHz
9
dBV
30 MHz to 130 MHz
16
130 MHz to 1GHz
19
SAE EMI Level
4
-
Table 31.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1.
Based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA +25 °C
conforming to JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device model)
TA +25 °C
conforming to JESD22-C101
II
500
Table 32.
Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA +105 °C conforming to JESD78
II level A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STM32F100R6H6B | 功能描述:ARM微控制器 - MCU 32BIT CORTEX M3 32K Flash 4KB RAM RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STM32F100R6H6BTR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU |
| STM32F100R6H7B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU |
| STM32F100R6H7BTR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU |
| STM32F100R6T6B | 功能描述:ARM微控制器 - MCU 32BIT CORTEX M3 64PINS 32KB RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
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