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参数资料
| 型号： | STM32F100R4T7BTR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PQFP64 |
| 封装： | 10 X 10 MM, ROHS COMPLIANT, LQFP-64 |
| 文件页数： | 66/86页 |
| 文件大小： | 1198K |
| 代理商： | STM32F100R4T7BTR |
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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Doc ID 16455 Rev 3
add a Schottky diode (pin to ground) to standard analog pins which may potentially inject
negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in
Section 5.3.12 does not affect the ADC accuracy.
Figure 32.
ADC accuracy characteristics
Figure 33.
Typical connection diagram using the ADC
1.
2.
Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy
this, fADC should be reduced.
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 34 or Figure 35,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.
EO
EG
1LSBIDEAL
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
4095
4094
4093
5
4
3
2
1
0
7
6
1
2
3
456
7
4093 4094 4095 4096
(1)
(2)
ET
ED
EL
(3)
VDDA
VSSA
ai14395b
VREF+
4096
(or
depending on package)]
VDDA
4096
[1LSBIDEAL =
ai14139d
STM32F10xxx
VDD
AINx
IL±1 A
0.6 V
VT
RAIN(1)
Cparasitic
VAIN
0.6 V
VT
RADC(1)
CADC(1)
12-bit
converter
Sample and hold ADC
converter
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STM32F100R6H6B | 功能描述:ARM微控制器 - MCU 32BIT CORTEX M3 32K Flash 4KB RAM RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
| STM32F100R6H6BTR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU |
| STM32F100R6H7B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU |
| STM32F100R6H7BTR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU |
| STM32F100R6T6B | 功能描述:ARM微控制器 - MCU 32BIT CORTEX M3 64PINS 32KB RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT |
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