参数资料
型号: STM32F105VCH7XXX
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, BGA100
封装: ROHS COMPLIANT, LFBGA-100
文件页数: 47/90页
文件大小: 998K
代理商: STM32F105VCH7XXX
STM32F105xx, STM32F107xx
Electrical characteristics
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = 40 to 105 °C unless otherwise specified.
Table 30.
Flash memory endurance and data retention
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 1000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 1000-4-4 standard.
Table 29.
Flash memory characteristics
Symbol
Parameter
Conditions
Typ
Max(1)
1.
Guaranteed by design, not tested in production.
Unit
tprog
16-bit programming time
TA = –40 to +105 °C
40
52.5
70
s
tERASE Page (1 KB) erase time
TA = –40 to +105 °C
20
40
ms
tME
Mass erase time
TA = –40 to +105 °C
20
40
ms
IDD
Supply current
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
20
mA
Write / Erase modes
fHCLK = 72 MHz, VDD = 3.3 V
5mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
A
Vprog
Programming voltage
2
3.6
V
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization, not tested in production.
Typ
Max
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2.
Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
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