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参数资料
型号： STM32F207ICT7TR
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 32-BIT, FLASH, 120 MHz, RISC MICROCONTROLLER, PQFP176
封装： 24 X 24 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LQFP-176
文件页数： 149/163页
文件大小： 2275K
代理商： STM32F207ICT7TR
Electrical characteristics
STM32F205xx, STM32F207xx
86/163
Doc ID 15818 Rev 7
Table 35.
Flash memory endurance and data retention
5.3.13
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
●
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
Table 34.
Flash memory programming with VPP
(1)
1.
TBD stands for “to be defined”.
Symbol
Parameter
Conditions
Min(2)
Typ
Max(2)
2.
Guaranteed by design, not tested in production.
Unit
tprog
Double word programming
TA = 0 to +40 °C
-
16
100(3)
3.
The maximum programming time is measured after 100K erase operations.
s
tERASE16KB Sector (16 KB) erase time
-
TBD
-
tERASE64KB Sector (64 KB) erase time
-
TBD
-
tERASE128KB Sector (128 KB) erase time
-
TBD
-
tME
Mass erase time
-
6.8
-
Vprog
Programming voltage
2.7
-
3.6
V
VPP
VPP voltage range
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
10
-
mA
tVPP
(4)
4.
VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied
-
1
hour
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization, not tested in production.
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2.
Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
相关PDF资料
PDF描述
STM32F207IGT7TR 32-BIT, FLASH, 120 MHz, RISC MICROCONTROLLER, PQFP176
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相关代理商/技术参数
参数描述
STM32F207IEH6 功能描述:ARM微控制器 - MCU 32-Bit ARM Cortex 512kb Connectivity RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT
STM32F207IET6 功能描述:ARM微控制器 - MCU 32BIT ARM Cortex M3 Connectivity 512kB RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT
STM32F207IFH6 功能描述:ARM微控制器 - MCU 32-Bit ARM Cortex 768kb Connectivity RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT
STM32F207IFT6 功能描述:ARM微控制器 - MCU 32BIT ARM Cortex M3 Connectivity 768kB RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT
STM32F207IGH6 功能描述:ARM微控制器 - MCU 32-Bit ARM Cortex M3 CAM 1024 kB RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 处理器系列:STM32F373xx 数据总线宽度:32 bit 最大时钟频率:72 MHz 程序存储器大小:256 KB 数据 RAM 大小:32 KB 片上 ADC:Yes 工作电源电压:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:LQFP-48 安装风格:SMD/SMT
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