参数资料
型号: STP22NE03L
厂商: 意法半导体
英文描述: N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET)
中文描述: N沟道增强模式“的单一的功能SIZETM”功率MOSFET(不适用沟道增强模式功率MOSFET的)
文件页数: 1/5页
文件大小: 74K
代理商: STP22NE03L
STP22NE03L
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE
" POWER MOSFET
s
TYPICAL RDS(on) = 0.034
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE 100
oC
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size
"
strip-based
process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
INTERNAL SCHEMATIC DIAGRAM
January 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain- gate Voltage (RGS = 20 k
)
30
V
VGS
Gate-source Voltage
± 15
V
ID
Drain Current (continuous) at Tc = 25
o C22
A
ID
Drain Current (continuous) at Tc = 100
oC16
A
IDM(
)
Drain Current (pulsed)
88
A
Ptot
Total Dissipation at Tc = 25
oC60
W
Derating Factor
0.4
W/
oC
dv/dt
Peak Diode Recovery voltage slope
6
V/ns
Tstg
Storage Temperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
(
) Pulse width limited by safe operating area
(1) ISD
≤22 A, di/dt ≤ 300 A/s, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
TYPE
VDSS
RDS(on)
ID
STP22NE03L
30 V
< 0.05
22 A
TO-220
1
2
3
1/5
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