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参数资料
| 型号： | STP22NE03L |
| 厂商： | 意法半导体 |
| 英文描述： | N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) |
| 中文描述： | N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的） |
| 文件页数： | 2/5页 |
| 文件大小： | 74K |
| 代理商： | STP22NE03L |
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
2.5
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ < 1%)
22
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 15 V)
TBD
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
A
VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
Tc =125
oC
1
10
A
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 15 V
± 100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
VDS = VGS
ID = 250
A
1
1.7
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V
ID = 11 A
VGS = 5V
ID = 11 A
0.034
0.049
0.05
0.06
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
22
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID =11 A
7
13
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0
680
160
60
950
220
85
pF
STP22NE03L
2/5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STP22NE10L | 制造商:STMicroelectronics 功能描述:STP22NE10L - Rail/Tube |
| STP22NF03L | 功能描述:MOSFET N-Ch 30 Volt 22 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STP22NF03L | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP22NF03L_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 30V - 0.0038ヘ - 22A - TO-220 STripFET⑩ II Power MOSFET |
| STP22NF03L_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 30 V, 0.0038 Ω, 22 A, TO-220 STripFET? II Power MOSFET |
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