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参数资料
| 型号： | STPF2010CT |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, ITO-220AB, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 77K |
| 代理商： | STPF2010CT |
STPF2010CT thru 2020CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SUPER FAST
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE - 100 to 200 Volts
FORWARD CURRENT - 20 Amperes
SEMICONDUCTOR
LITE-ON
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR 0.25A.
3.Device mounted on 100mm x 100mm x 2 mm Cu Plate.
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current
@TC
=105℃
Peak Forward Surge Current
8.3ms single half sine-wave
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at
Pulse width =300us
2% Duty cycle
20
125
℃
TJ,TSTG
Operating and Storage Temperature Range
-55 to +150
Typical Thermal Resistance (Note 3)
2.0
/W
℃
CJ
Typical Junction Capacitance
per element (Note 1)
230
pF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125℃
@TJ =25℃
IR
10
500
uA
VF
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
Maximum Reverse Recovery Time (Note 2)
TRR
ns
IF=10A@TJ =25℃
IF=10A@TJ =125℃
IF=20A@TJ =25℃
IF=20A@TJ =125℃
REV.2, Aug-2007, KTGC20
200
140
200
STPF2020CT
STPF2010CT
70
100
1.1
1.0
1.25
1.20
30
ITO-220AB
PIN 1
PIN 3
PIN 2
CASE
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
R0JC
@TC
=25℃
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