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参数资料
| 型号： | STPS1H100U |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 146K |
| 代理商： | STPS1H100U |
Characteristics
STPS1H100
2/10
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.54 x IF(AV) + 0.08 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
RMS forward voltage
10
A
IF(AV)
Average forward current
TL = 160 °C δ = 0.5
1
A
IFSM
Surge non repetitive forward current tp =10 ms sinusoidal
50
A
IRRM
Repetitive peak reverse current
tp = 2 s F = 1 kHz square
1
A
IRSM
Non repetitive peak reverse current
tp = 100 s square
1
A
PARM
Repetitive peak avalanche power
tp = 1 s Tj = 25 °C
1500
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to lead
SMA
30
°C/W
SMB
25
SMAflat
25
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms,
δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
4A
Tj = 125 °C
0.2
0.5
mA
VF
(2)
2.
Pulse test: tp = 380 s,
δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 1 A
0.77
V
Tj = 125 °C
0.58
0.62
Tj = 25 °C
IF = 2 A
0.86
Tj = 125 °C
0.65
0.7
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
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相关代理商/技术参数 |
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|---|---|
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