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| 型号： | STPS1L30MF |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-222AA |
| 封装： | ROHS COMPLIANT, ST MITE PACKAGE-2 |
| 文件页数： | 1/7页 |
| 文件大小： | 92K |
| 代理商： | STPS1L30MF |
August 2006
Rev 1
1/7
STPS1L30MF
Low drop power Schottky rectifier in flat package
Main product characteristics
Features and benefits
■ Very low profile package: 0.85 mm
■ Backward compatible with standard STmite
footprint
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ Low forward voltage drop for higher efficiency
and extended battery life
■ Low thermal resistance
■ Avalanche capability specified
Order Code
Description
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite flat, this device is intended
for use in very low voltage, high frequency
inverters, free wheeling and polarity protection
applications. Due to the very small size of the
package this device fits battery powered
equipment (cellular, notebook, PDA’s, printers) as
well as chargers and PCMCIA cards.
IF(AV)
1 A
VRRM
30 V
Tj (max)
150° C
VF (max)
0.39 V
Part number
Marking
STPS1L30MF
F1L3
K
A
STmite flat
(DO222-AA)
Table 1.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS)
RMS forward voltage
2
A
IF(AV)
Average forward current
Tc = 140° C δ = 0.5
1
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
50
A
PARM
Repetitive peak avalanche power
tp = 1 s Tj = 25° C
1200
W
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Maximum operating junction temperature(1)
150
°C
dV/dt
Critical rate of rise of reverse voltage (rated VR, Tj = 25° C)
10000
V/s
1.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
<
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