参数资料
型号: STPS20S100CT
厂商: STMICROELECTRONICS
元件分类: 整流器
英文描述: 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 2/9页
文件大小: 0K
代理商: STPS20S100CT
Characteristics
STPS20S100C
2/9
Doc ID 11281 Rev 2
1
Characteristics
When the diodes 1 and 2 are used simultaneously:
Δ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.009 IF2(RMS)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward
current
δ = 0.5
TO-220AB / I2PAK Tc = 150 °C
Per diode
Per device
10
20
A
TO-220FPAB
Tc = 140 °C
Per diode
Per device
10
20
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
180
A
PARM
Repetitive peak avalanche power
tp = 1s Tj = 25 °C
7200
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB / I2PAK
Per diode
2.2
°C/W
Total
1.3
Rth(c)
Coupling
0.3
Rth(j-c)
Junction to case
TO-220FPAB
Per diode
4.5
°C/W
Total
3.5
Rth(c)
Coupling
2.5
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
3.5
A
Tj = 125 °C
1.3
4.5
mA
VF
(2)
2.
Pulse test: tp = 380 s, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 5 A
0.73
V
Tj = 125 °C
0.57
0.61
Tj = 25 °C
IF = 10 A
0.85
Tj = 125 °C
0.66
0.71
Tj = 25 °C
IF = 20 A
0.94
Tj = 125 °C
0.74
0.80
dPtot
dTj
<
1
Rth(j-a)
相关PDF资料
PDF描述
STPS20S100CFP 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
STPS20S100CR 10 A, 100 V, SILICON, RECTIFIER DIODE
STPS240CE 1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
STPS2530CG-TR 12.5 A, 30 V, SILICON, RECTIFIER DIODE
STPS2L25UF 2 A, 25 V, SILICON, RECTIFIER DIODE
相关代理商/技术参数
参数描述
STPS20S1Z00CR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:POWER SCHOTTKY RECTIFIER
STPS20SM100S 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Power Schottky rectifier
STPS20SM100SFP 功能描述:肖特基二极管与整流器 20A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
STPS20SM100SG-TR 功能描述:肖特基二极管与整流器 20A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
STPS20SM100SR 功能描述:肖特基二极管与整流器 20A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel