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参数资料
| 型号： | STPS20S100CT |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 代理商： | STPS20S100CT |
Characteristics
STPS20S100C
2/9
Doc ID 11281 Rev 2
1
Characteristics
When the diodes 1 and 2 are used simultaneously:
Δ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.009 IF2(RMS)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward
current
δ = 0.5
TO-220AB / I2PAK Tc = 150 °C
Per diode
Per device
10
20
A
TO-220FPAB
Tc = 140 °C
Per diode
Per device
10
20
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
180
A
PARM
Repetitive peak avalanche power
tp = 1s Tj = 25 °C
7200
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB / I2PAK
Per diode
2.2
°C/W
Total
1.3
Rth(c)
Coupling
0.3
Rth(j-c)
Junction to case
TO-220FPAB
Per diode
4.5
°C/W
Total
3.5
Rth(c)
Coupling
2.5
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
3.5
A
Tj = 125 °C
1.3
4.5
mA
VF
(2)
2.
Pulse test: tp = 380 s, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 5 A
0.73
V
Tj = 125 °C
0.57
0.61
Tj = 25 °C
IF = 10 A
0.85
Tj = 125 °C
0.66
0.71
Tj = 25 °C
IF = 20 A
0.94
Tj = 125 °C
0.74
0.80
dPtot
dTj
<
1
Rth(j-a)
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