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参数资料
| 型号： | STPS30M100DJF-TR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | 6 X 5 MM, ROHS COMPLIANT, PLASTIC, POWERFLAT-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 98K |
| 代理商： | STPS30M100DJF-TR |
Characteristics
STPS30M100DJF
2/7
Doc ID 16751 Rev 2
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.00267 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values with terminals 1 and 3 short-circuited)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS) Forward rms current
45
A
IF(AV)
Average forward current
δ = 0.5
Tc = 90 °C
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
200
A
PARM
Repetitive peak avalanche power
tp = 1 s, Tj = 25 °C
15000
W
VARM
(1)
1.
Refer to Figure 12.
Maximum repetitive peak avalanche
voltage
tp < 1 s, Tj < 150 °C
IAR < 37.5 A
120
V
VASM
Maximum single pulse peak avalanche
voltage
tp < 1 s, Tj < 150 °C
IAR < 37.5 A
120
V
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature (2)
2.
condition to avoid thermal runaway for a diode on its own heatsink
150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
2.5
°C/W
Table 4.
Static electrical characteristics (terminals 1 and 3 short-circuited)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 380 s, δ < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
--
100
A
Tj = 125 °C
-
10
40
mA
VF
Forward voltage drop
Tj = 25 °C
IF = 15 A
-
0.82
V
Tj = 125 °C
-
0.58
0.66
Tj = 25 °C
IF = 30 A
-
0.96
Tj = 125 °C
-
0.66
0.73
dPtot
dTj
<
1
Rth(j-a)
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