- 您现在的位置：买卖IC网 > PDF目录31384 > STPS8L30B-TR (STMICROELECTRONICS) 8 A, 30 V, SILICON, RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | STPS8L30B-TR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 30 V, SILICON, RECTIFIER DIODE |
| 封装： | LEAD FREE, PLASTIC, DPAK-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 97K |
| 代理商： | STPS8L30B-TR |
March 2006
Rev 4
1/7
7
STPS8L30
Low drop power Schottky rectifier
Main product characteristics
Features and benefits
■ Low cost device with low drop forward voltage
for less power dissipation and reduced
heatsink
■ Optimized conduction/reverse losses trade-off
which leads to the highest yield in the
application
■ High power surface mount miniature package
■ Avalanche capability specified
Description
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in DPAK and IPAK, this device is
especially intended for use as a Rectifier at the
secondary of 3.3 V SMPS or DC/DC units.
wheeling and polarity protection applications.
Order codes
IF(AV)
8 A
VRRM
30 V
Tj
150° C
VF(max)
0.40 V
Part Numbers
Marking
STPS8L30B
LS30
STPS8L30B-TR
LS30
STPS8L30H
A
NC
K
A
NC
K
DPAK
STPS8L30B
IPAK
STPS8L30H
Table 1.
Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS)
RMS forward voltage
7
A
IF(AV)
Average forward current
Tc = 135° C
δ = 0.5
8
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
IRRM
Peak repetitive reverse current
tp = 2 s F = 1 kHz square
1
A
IRSM
Non repetitive peak reverse current
tp = 100 s square
2
A
PARM
Repetitive peak avalanche power
tp = 1 s Tj = 25° C
3000
W
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Maximum operating junction temperature (1)
150
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
1.
thermal runaway condition for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
>
相关PDF资料 |
PDF描述 |
|---|---|
| STPSC1206D | 12 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC |
| STTH10LCD06SG-TR | 10 A, 600 V, SILICON, RECTIFIER DIODE |
| STTH10LCD06D | 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| STTH10LCD06SB-TR | 10 A, 600 V, SILICON, RECTIFIER DIODE |
| STTH10R04D | 10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| STPS8L30BY-TR | 制造商:STMicroelectronics 功能描述:RECTIFIER - Tape and Reel 制造商:STMicroelectronics 功能描述:DIODE SCHOTTKY 30V 8A DPAK |
| STPS8L30DEE-TR | 功能描述:肖特基二极管与整流器 Switch Mode REC 8A 30V Vrrm 0.34V VF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| STPS8L30H | 功能描述:肖特基二极管与整流器 LD PWR SCHOT RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| STPSA42 | 功能描述:两极晶体管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| STPSA42-AP | 功能描述:两极晶体管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。