参数资料
型号: STR736FV2T7
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 32-BIT, FLASH, 36 MHz, RISC MICROCONTROLLER, PQFP100
封装: 14 X 14 MM, TQFP-100
文件页数: 32/52页
文件大小: 1384K
代理商: STR736FV2T7
Electrical parameters
STR73xFxx
38/52
4.3.5
I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified.
1.
Data based on characterization results, not tested in production.
2.
When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise
refer to IINJ(PIN) specification. A positive injection is induced by VIN>V33 while a negative injection is
induced by VIN<VSS. Refer to Section 4.2 on page 22 for more details.
3.
Leakage could be higher than max. if negative current is injected on adjacent pins.
4.
Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of
the I/O for example or an external pull-up or pull-down resistor. Data based on design simulation and/or
technology characteristics, not tested in production.
6.
The RPU pull-up and RPD pull-down equivalent resistor are based on a resistive transistor (corresponding
IPU and IPD current characteristics described in Figure 19).
Table 23.
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage 1)
TTL ports
0.8
V
VIH
Input high level voltage 1)
2.0
IINJ(PIN) Injected current on any I/O pin
±10
mA
ΣI
INJ(PIN)
2)
Total injected current (sum of all
I/O and control pins)
±75
mA
Ilkg
Input leakage current 3)
VSSVINVDD
±1
μA
IS
Static current consumption 4)
Floating input
mode
200
A
RPU
Weak pull-up equivalent
resistor5)
VIN=VSS
55
120
220
k
Ω
RPD
Weak pull-down equivalent
resistor5)
VIN=VDD
55
120
220
k
Ω
CIO
I/O pin capacitance
5
pF
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