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参数资料
| 型号： | STS3DPF60L |
| 厂商： | 意法半导体 |
| 英文描述： | DUAL P-CHANNEL 60V - 0.10 ohm - 3A SO-8 STripFET MOSFET |
| 中文描述： | 双P沟道60V的- 0.10欧姆-第3A的SO - 8 MOSFET的STripFET |
| 文件页数： | 2/9页 |
| 文件大小： | 292K |
| 代理商： | STS3DPF60L |
2/9
Table 3: Absolute Maximum ratings
(
) Pulse width limited by safe operating area.
Table 4: Thermal Data
(*)
When Mounted on 1 inch2 FR-4 board, 2 oz of Cu t
≤ 10 s
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain-gate Voltage (RGS = 20 k)
60
V
VGS
Gate- source Voltage
± 16
V
ID
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
3
1.9
A
IDM()
Drain Current (pulsed)
12
A
Ptot
Total Dissipation at TC = 25°C
2W
Tstg
Storage Temperature
-55 to 150
°C
Tj
Operating Junction Temperature
Rthj-amb
(*)Thermal Resistance Junction-ambient
62.5
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 A, VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating ,TC= 125°C
1
10
A
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
1.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 1.5 A
VGS = 4.5 V, ID = 1.5 A
0.10
0.130
0.12
0.160
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