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参数资料
| 型号： | STW7NA80FI |
| 厂商： | 意法半导体 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增强型功率MOS器件 |
| 文件页数： | 1/10页 |
| 文件大小： | 122K |
| 代理商： | STW7NA80FI |
STW7NA80
STH7NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 1.68
s
± 30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
Unit
ST W7NA80
STH7NA80FI
VDS
Drain-source Voltage (VGS = 0)
800
V
VDGR
Drain- gate Voltage (RGS =20 k
)
800
V
VGS
G ate-source Volt age
± 30
V
ID
Drain Current (continuous) at Tc =25
oC6.5
4
A
ID
Drain Current (continuous) at Tc =100
oC4
2.5
A
IDM (
)
Drain Current (pulsed)
26
A
Ptot
T otal Dissipat ion at Tc =25
oC
150
60
W
Derating Factor
1.2
0. 48
W /
oC
VISO
I nsulation W ithstand Voltage (DC)
4000
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
(
) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STW 7NA80
STH7NA80F I
800 V
< 1.9
< 1.9
6. 5 A
4A
October 1998
TO-247
ISOWATT218
1
2
3
1
2
3
1/10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STW7NA90 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
| STW7NA90FI | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
| STW7NB80 | 功能描述:MOSFET RO 512-FQA7N80 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STW7NC80Z | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STW7NC90Z | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.55ohm - 6A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
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