参数资料
型号: STW7NA80FI
厂商: 意法半导体
英文描述: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
中文描述: ? -快速通道增强型功率MOS器件
文件页数: 4/10页
文件大小: 122K
代理商: STW7NA80FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =400 V
ID = 3.5 A
RG =47
VGS =10 V
(see t est circuit, f igure 3)
3.5
9.5
45
125
ns
(di/dt)on
Turn-on Current Slope
VDD =640 V
ID =7 A
RG =47
VGS =10 V
(see t est circuit, figure 5)
170
A/
s
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 640 V
ID =7 A
VGS =10 V
58
8
27
78
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
VDD =640 V
ID =6 A
RG =47
VGS =10 V
(see t est circuit, f igure 5)
90
25
125
120
35
165
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
)
Source-drain Current
(pulsed)
6. 5
26
A
VSD (
)Forward On Voltage
ISD =7 A
VGS =0
1. 6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =7 A
di/dt = 100 A/
s
VDD = 100 V
Tj =150
oC
(see t est circuit, f igure 5)
850
15
35
ns
C
A
(
) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
STW7NA80-STH7NA80FI
3/10
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