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参数资料
| 型号： | STW7NA80FI |
| 厂商： | 意法半导体 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增强型功率MOS器件 |
| 文件页数： | 2/10页 |
| 文件大小： | 122K |
| 代理商： | STW7NA80FI |
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STW7NA80-STH7NA80FI
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| SUPU-10-G-5.00-MBS-AMS | INTERCONNECTION DEVICE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| STW7NA90 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
| STW7NA90FI | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
| STW7NB80 | 功能描述:MOSFET RO 512-FQA7N80 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STW7NC80Z | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STW7NC90Z | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.55ohm - 6A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
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