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参数资料
| 型号： | STW7NA80FI |
| 厂商： | 意法半导体 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增强型功率MOS器件 |
| 文件页数： | 3/10页 |
| 文件大小： | 122K |
| 代理商： | STW7NA80FI |
THERMAL DATA
TO-247
ISOWATT 218
Rthj-case
Thermal Resistance Junction-case
Max
0. 83
2. 08
oC/W
Rthj-amb
Rthc-sink
T l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
30
0.1
300
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ <1%)
6.3
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
320
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
AVGS = 0
800
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
Tc = 100
oC
25
50
A
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
A2.25
3
3.75
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V
ID = 3.5 A
1.68
1.9
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
7A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =3.5 A
4. 5
6.3
S
Ciss
Cos s
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
1330
160
40
1750
210
55
pF
STW7NA80-STH7NA80FI
2/10
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相关代理商/技术参数 |
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| STW7NA90 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
| STW7NA90FI | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
| STW7NB80 | 功能描述:MOSFET RO 512-FQA7N80 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STW7NC80Z | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| STW7NC90Z | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.55ohm - 6A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
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