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参数资料
| 型号： | STW45NM60D |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 567K |
| 代理商： | STW45NM60D |
STW45NM60D
Electrical ratings
Doc ID 15709 Rev 1
3/12
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate- source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
45
A
ID
Drain current (continuous) at TC = 100 °C
28
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
180
A
PTOT
Total dissipation at TC = 25 °C
417
W
Derating factor
3.33
W/°C
dv/dt (2)
2.
ISD ≤ 45 A, di/dt ≤ 400 A/s, VDD ≤ 80% V(BR)DSS
Peak diode recovery voltage slope
20
V/ns
Tstg
Storage temperature
-65 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.3
°C/W
Rthj-amb
Thermal resistance junction-amb
30
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
15
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 35 V)
850
mJ
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