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参数资料
| 型号： | SUD25N15-52-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 150V TO252 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 25A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 52 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1725pF @ 25V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 标准包装 |
| 其它名称： | SUD25N15-52-E3DKR |
SUD25N15-52
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
150
2
4
± 100
V
nA
V DS = 150 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 150 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 150 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current b
I D(on)
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 5 A
50
0.042
0.052
A
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 5 A, T J = 125 °C
V GS = 10 V, I D = 5 A, T J = 175 °C
V GS = 6 V, I D = 5 A
0.047
0.109
0.145
0.060
Ω
Forward
Transconductance b
g fs
V DS = 15 V, I D = 25 A
40
S
Dynamic a
Input Capacitance
C iss
1725
Gate-Drain Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
c
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 75 V, V GS = 10 V, I D = 25 A
216
100
33
9
12
40
pF
nC
Gate Resistance
R g
1
3
Ω
Turn-On Delay Time
c
t d(on)
15
25
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 50 V, R L = 3 Ω
I D ? 25 A, V GEN = 10 V, R g = 2.5 Ω
70
25
60
100
40
90
ns
Source-Drain Diode Ratings and Characteristics T C = 25 °C
Pulsed Current
I SM
50
A
Diode Forward Voltage b
Source-Drain Reverse Recovery Time
V SD
t rr
I F = 25 A, V GS = 0 V
I F = 25 A, dI/dt = 100 A/μs
0.9
95
1.5
140
V
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SUD25N15-52-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUD25N15-52-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) 175C DEG MOSFET |
| SUD25N15-52-T4-E3 | 功能描述:MOSFET N-CH D-S 150V TO252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SUD30N03-30 | 功能描述:MOSFET 30V 30A 50W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SUD30N03-30 | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
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