SVC325
No.6649-1/3
Features
Miniaturization and high-integration of tuner sets
can be easily achieved due to the small package.
High capacitance ratio and high quality factor.
Surface mount type.
Electrical Connection
Specifications
Absolute Maximum Ratings
at Tc=25
°
C
Parameter
Symbol
VR
Tj
Tstg
Conditions
Ratings
Unit
V
°
C
°
C
Reverse Voltage
Junction Temperature
Storage Temperature
16
125
--55 to +125
Electrical Characteristics
at Tc=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
min
max
Breakdown Voltage
Reverse Current
V(BR)R
IR
C1.2V
C3.5V
C6.0V
C8.0V
Q
CR
IR=10
μ
A
VR=9V
VR=1.2V, f=1MHz*
VR=3.5V, f=1MHz
VR=6.0V, f=1MHz
VR=8.0V, f=1MHz
VR=1.0V, f=1MHz
C1.2V / C8.0V, f=1MHz
16
V
nA
pF
pF
pF
pF
100
459.1
192.1
60.91
27.05
388.1
144.2
45.71
20.30
200
15.5
Interterminal Capacitance
Quality Factor
Capacitance Ratio
Marking : V2
Note)*1 1MHz signal : 20mVrms
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SVC325
Varactor Diode
Package Dimensions
unit : mm
1303
1 : NC
2 : Anode
3 : Cathode
SANYO : CPH3
0.05
0
0
0
1
0
0
1.9
1
2
3
2
0
2.9
0.15
0.4
[SVC325]
92500 GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NC
A
C
Ordering number : ENN6649
Diffused Junction Type Silicon Diode