参数资料
| 型号： | SZNUP2105LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IC CAN BUS PROTECTOR DUAL SOT23 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 24V |
| 电压 - 击穿： | 26.2V |
| 功率（瓦特）： | 350W |
| 电极标记： | 2 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 带卷 (TR) |
| 其它名称： | SZNUP2105LT1G-ND SZNUP2105LT1GOSTR |
NUP2105L, SZNUP2105L
MAXIMUM RATINGS (T J = 25 ? C, unless otherwise specified)
Symbol
PPK
T J
T J
T L
ESD
Rating
Peak Power Dissipation
8 x 20 m s Double Exponential Waveform (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature (10 s)
Human Body model (HBM)
Machine Model (MM)
IEC 61000 ? 4 ? 2 Specification (Contact)
Value
350
? 55 to 150
? 55 to 150
260
16
400
30
Unit
W
? C
? C
? C
kV
V
kV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Non ? repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T J = 25 ? C, unless otherwise specified)
Symbol
V RWM
V BR
I R
V C
V C
I PP
CJ
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
Test Conditions
(Note 2)
I T = 1 mA (Note 3)
V RWM = 24 V
I PP = 5 A (8 x 20 m s Waveform)
(Note 4)
I PP = 8 A (8 x 20 m s Waveform)
(Note 4)
8 x 20 m s Waveform (Note 4)
V R = 0 V, f = 1 MHz (Line to GND)
Min
24
26.2
?
?
?
?
?
Typ
?
?
15
?
?
?
?
Max
?
32
100
40
44
8.0
30
Unit
V
V
nA
V
V
A
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
4. Pulse waveform per Figure 1.
ORDERING INFORMATION
NUP2105LT1
NUP2105LT1G
SZNUP2105LT1G
NUP2105LT3
NUP2105LT3G
SZNUP2105LT3G
Device
Package
SOT ? 23
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
SOT ? 23
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
Shipping ?
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| TSW-106-07-T-D | CONN HEADER 12POS .100" DL TIN |
| 0388007.MXP | FUSE 250V FA 3AG METI B 7A |
| 3793-6002 | PROTECT HEADER STRT 10 CONTACT |
| 929835-01-17-RK | CONN HEADER .100 SNGL R/A 17POS |
| 0388007.MXEP | FUSE 250V PT FA 3AG METI B 7A |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SZNUP2105LT3G | 功能描述:ESD 抑制器 SOT-23 27 CAN BUS RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SZNUP2115L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Line FlexRay Bus Protector |
| SZNUP2115LT1G | 制造商:ON Semiconductor 功能描述:LOW CAPACITANCE ESD PROTE - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / LOW CAPACITANCE ESD PROTE |
| SZNUP2115LT3G | 制造商:ON Semiconductor 功能描述:LOW CAPACITANCE ESD PROTE - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / LOW CAPACITANCE ESD PROTE |
| SZNUP2301MW6T1G | 功能描述:ESD 抑制器 MI LO CAP DIODE ARRY RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
发布紧急采购，3分钟左右您将得到回复。