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参数资料
| 型号： | T436416A-8S |
| 厂商： | TM Technology, Inc. |
| 英文描述： | 4M X 16 SDRAM |
| 中文描述： | 4米× 16内存 |
| 文件页数： | 5/29页 |
| 文件大小： | 712K |
| 代理商： | T436416A-8S |
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TE
CH
tm
DC CHARACTERISTICS
T
A
= 0 to 70
°
C
, V
IH
(min)/V
IL
(max)=2.0V/0.8V
T436416A
TM Technology Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: MAY. 2003
Revision: B
Speed version
-7 -7.5 -8
Parameter
Symbol
-6
-10
Unit
Test Condition
Note
Operating Current
( One Bank Active) I
CC1
140 120 115 110 100 mA
Burst Length = 1
t
RC
≥
t
RC
(min) ,
t
CC
≥
t
CC
(min),I
OL
= 0 mA
CKE
≤
V
IL
(max),
t
CC
=15ns
1,3
I
CC2
P
2
Precharge Standby
Current in power-
down mode
I
CC2
PS
2
mA
CKE
≤
V
IL
(max),CLK
≤
V
IL
(max),
t
CC
=
∞
3
I
CC2
N
30
CKE
≥
V
IH
(min),
CS
≥
V
IH
(min),
t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min),CLK
≤
V
IL
(min),
t
CC
=
∞
Precharge Standby
Current in non
power-down mode
I
CC2
NS
2
mA
Input signals are stable
CKE
≤
VIL(max),
t
CC
=15ns
3
I
CC3
P
10
Active Standby
Current in power-
down mode
I
CC3
PS
10
mA
CKE
≤
V
IL
(max),CLK
≤
V
IL
(max),
t
CC
=
∞
3
I
CC3
N
40
CKE
≥
V
IH
(min),
CS
≥
V
IH
(min),
t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min),CLK
≤
V
IL
(min),
t
CC
=
∞
Active Standby
Current in non
power-down mode
(One Bank Active) I
CC3
NS
10
mA
Input signals are stable
3
150 130 125 120 110
CAS Latency 3
Operating Current
(Burst Mode)
I
CC4
150 130 125 120 110
mA
CAS Latency 2
I
OL
=0 mA,Page Burst
All Band Activated
t
CCD
=
t
CCD
(min)
1,3
Refresh Current
I
CC5
150 130 125 120 110 mA t
RC
≥
t
RC
(min)
2,3
Self refresh
Current
I
CC6
1
mA
CKE
≤
0.2V
Note: 1. Measured with output open. Addresses are changed only one time during
t
CC
(min)
.
2. Refresh period is 64ms. Addresses are changed only one time during
t
CC
(min)
.
3.
t
CC
: Clock cycle time.
t
RC
: Row cycle time.
t
CCD
: Column address to column address delay time.
相关PDF资料 |
PDF描述 |
|---|---|
| T436416A-8SG | 4M X 16 SDRAM |
| T436416C | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-6S | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-6SG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-7S | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| T436416A-8SG | 制造商:TMT 制造商全称:TMT 功能描述:4M X 16 SDRAM |
| T436416C | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-6S | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-6SG | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416C-7S | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
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