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参数资料
| 型号： | T436416C-7SG |
| 厂商： | TM Technology, Inc. |
| 英文描述： | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| 中文描述： | 4米× 16 SDRAM的100万x 16Bit的X 4Banks同步DRAM |
| 文件页数： | 1/28页 |
| 文件大小： | 651K |
| 代理商： | T436416C-7SG |
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TE
CH
tm
SDRAM
FEATURES
3.3V power supply
Four banks operation
LVTTL compatible with multiplexed address
All inputs are sampled at the positive going
edge of system clock
DQM for masking
Auto refresh and self refresh
64ms refresh period
15.6 us refresh interval.
MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
Available package type in 54 pin TSOP(II)
Operating temperature : 0 ~ +70
°
C
ORDERING INFORMATION
T436416C
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
4M x 16 SDRAM
1M x 16bit x 4Banks Synchronous DRAM
GRNERAL DESCRIPTION
The T436416C is 67,108,864 bits synchronous
high data rate Dynamic RAM organized as
4 x 1,048,576 words by 16 bits , fabricated with
high performance CMOS technology .
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle. Range of operating
frequencies, programmable burst length and
programmable latencies allow the same device to
be useful for a variety of high bandwidth, high
performance memory system applications.
PIN ARRANGEMENT (
Top View)
D Q 1
V
D D
4 6
4 5
4 4
4 3
4 1
4 2
4 0
3 6
3 5
3 4
3 3
3 2
3 1
3 0
2 9
1
2
3
4
6
5
7
8
9
1 1
1 5
1 6
1 7
1 8
1 9
2 0
V
D D Q
D Q 1 1
D Q 1 0
A 8
A 7
A 9
1 0
2 1
2 2
4 7
4 8
4 9
5 0
V
S S Q
D Q 2
A 0
A 1
D Q 1 5
D Q 1 4
V ss
2 3
2 4
2 5
2 8
2 7
2 6
D Q 3
D Q 0
V
D D Q
D Q 4
D Q 5
V
S S Q
D Q 6
R A S
C S
A 1 2
A 1 0 /A P
A 2
A 3
V
D D
V
S S Q
D Q 1 3
D Q 1 2
D Q 9
U D Q M
N .C
C L K
C K E
V ss
A 6
A 5
A 4
1 2
1 3
1 4
3 9
3 8
3 7
D Q 7
V
D D
L D Q M
D Q 8
V ss
N .C /R F U
W E
C A S
5 4 P IN T S O P (II)
(4 0 0 m il x 8 7 5 m il)
(0 .8 m m P IN P IT C H )
5 1
5 2
5 3
5 4
V
D D Q
A 1 3
V
D D Q
V
S S Q
A 1 1
PART NO.
MAX
FREQUENCY
166 MHz
PACKAGE
T436416C-6S
54 pin TSOP(II)
T436416C-7S
143 MHz
54 pin TSOP(II)
54 pin TSOP(II)
lead-free
54 pin TSOP(II)
lead-free
T436416C-6SG
166 MHz
T436416C-7SG
143 MHz
相关PDF资料 |
PDF描述 |
|---|---|
| T436416D | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5C | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5CG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5S | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5SG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| T436416D | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5C | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5CG | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5S | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5SG | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
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