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参数资料
| 型号： | T436416D |
| 厂商： | TM Technology, Inc. |
| 英文描述： | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| 中文描述： | 4米× 16 SDRAM的100万x 16Bit的X 4Banks同步DRAM |
| 文件页数： | 1/73页 |
| 文件大小： | 734K |
| 代理商： | T436416D |
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TE
CH
tm
SDRAM
FEATURES
Fast access time from clock: 4.5/5/5.4 ns
Fast clock rate: 200/166/143 MHz
Fully synchronous operation
Internal pipelined architecture
1M word x 16-bit x 4-bank
Programmable Mode registers
- CAS# Latency: 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: interleaved or linear burst
- Burst stop function
Auto Refresh and Self Refresh
4096 refresh cycles/64ms
CKE power down mode
Single +3.3V
±
0.3V power supply
Interface: LVTTL
54-pin 400 mil plastic TSOP II package
60-Ball, 6.4 mm x 10.1 mm TFBGA package
Key Specifications
T436416D
t
CK3
Clock Cycle time(min.)
t
AC3
Access time from CLK(max.)
t
RAS
Row Active time(min.)
t
RC
Row Cycle time(min.)
ORDERING INFORMATION
Part Number
T436416D-5S/-5C
T436416D-5SG/-5CG
T436416D-6S/-6C
T436416D-6SG/-6CG
T436416D-7S/-7C
T436416D-7SG/-7CG
S : indicates TSOPII Package,
C : indicates TFBGA Package,
G : indicates Pb Free Package
T436416D
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
4M x 16 SDRAM
1M x 16bit x 4Banks Synchronous DRAM
-
5/6/7
5/6/7 ns
4.5/5/5.4/ ns
35/42/45 ns
50/60/63 ns
Frequency
200MHz
200MHz
166MHz
166MHz
143MHz
143MHz
Package
TSOP II / TFBGA
TSOP II / TFBGA
TSOP II / TFBGA
TSOP II / TFBGA
TSOP II / TFBGA
TSOP II / TFBGA
GRNERAL DESCRIPTION
The T436416D SDRAM is a high-speed CMOS
synchronous DRAM containing 64 Mbits. It is internally
configured as 4 Banks of 1M word x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CLK). Read and write
accesses to the SDRAM are burst oriented; accesses
start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of a
BankActivate command which is then followed by a
Read or Write command.
The T436416D provides for programmable Read
or Write burst lengths of 1, 2, 4, 8, or full page, with a
burst termination option. An auto precharge function
may be enabled to provide a self-timed row precharge
that is initiated at the end of the burst sequence. The
refresh functions, either Auto or Self Refresh are easy to
use.
By having a programmable mode register, the
system can choose the most suitable modes to maximize
its performance. These devices are well suited for
applications requiring high memory bandwidth and
particularly well suited to high performance PC
applications.
相关PDF资料 |
PDF描述 |
|---|---|
| T436416D-5C | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5CG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5S | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5SG | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-6C | 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| T436416D-5C | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5CG | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5S | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-5SG | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
| T436416D-6C | 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM |
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