参数资料
型号: T436416D-7S
厂商: TM Technology, Inc.
英文描述: 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
中文描述: 4米× 16 SDRAM的100万x 16Bit的X 4Banks同步DRAM
文件页数: 5/73页
文件大小: 734K
代理商: T436416D-7S
TE
CH
tm
Operation Mode
T436416D
TM Technology Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
the truth table for the operation commands.
Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 2 shows
Table 2. Truth Table (Note (1), (2) )
Command
State
CKE
n-1
CKE
n
DQM BA
0,1
A
10
A
0-9,11
CS# RAS# CAS# WE#
BankActivate
Idle
(3)
H
X
X
V
Row address
L
L
H
H
BankPrecharge
Any
H
X
X
V
L
X
L
L
H
L
PrechargeAll
Any
H
X
X
X
H
X
L
L
H
L
Write
Active
(3)
H
X
X
V
L
L
H
L
L
Write and AutoPrecharge
Active
(3)
H
X
X
V
H
Column
address (A0
~ A7)
L
H
L
L
Read
Active
(3)
H
X
X
V
L
L
H
L
H
Read and Autoprecharge
Active
(3)
H
X
X
V
H
Column
address (A0
~ A7)
L
H
L
H
Mode Register Set
Idle
H
X
X
OP code
L
L
L
L
No-Operation
Any
H
X
X
X
X
X
L
H
H
H
Burst Stop
Active
(4)
H
X
X
X
X
X
L
H
H
L
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
AutoRefresh
Idle
H
H
X
X
X
X
L
L
L
H
SelfRefresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
SelfRefresh Exit
Idle
L
H
X
X
X
X
H
X
X
X
(SelfRefresh)
L
H
H
H
Clock Suspend Mode Entry
Active
H
L
X
X
X
X
X
X
X
X
Power Down Mode Entry
Any
(5)
H
L
X
X
X
X
H
X
X
X
L
H
H
H
Clock Suspend Mode Exit
Active
L
H
X
X
X
X
X
X
X
X
Power Down Mode Exit
Any
L
H
X
X
X
X
H
X
X
X
(PowerDown)
L
H
H
H
Data Write/Output Enable
Active
H
X
L
X
X
X
X
X
X
X
Data Mask/Output Disable
Note:
1. V=Valid X=Don't Care L=Low level H=High level
2. CKE
n
signal is input level when commands are provided.
CKE
n-1
signal is input level one clock cycle before the commands are provided.
3. These are states of bank designated by BS signal.
4. Device state is 1, 2, 4, 8, and full page burst operation.
5. Power Down Mode can not enter in the burst operation.
When this command is asserted in the burst cycle, device state is clock suspend mode.
Active
H
X
H
X
X
X
X
X
X
X
相关PDF资料
PDF描述
T436416D-7SG 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436432B-5S 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
T436432B-5SG 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
T436432B-6S 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
T436432B-6SG 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
相关代理商/技术参数
参数描述
T436416D-7SG 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436432B 制造商:TMT 制造商全称:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
T436432B-10S 制造商:TMT 制造商全称:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
T436432B-10SG 制造商:TMT 制造商全称:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
T436432B-55S 制造商:TMT 制造商全称:TMT 功能描述:2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM