参数资料
型号: T436432B-6SG
厂商: TM Technology, Inc.
英文描述: 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
中文描述: 200万× 32内存为512k × 32 x 4Banks同步DRAM
文件页数: 42/72页
文件大小: 731K
代理商: T436432B-6SG
TE
CH
tm
T436432B
TM Technology Inc. reserves the right
P. 42
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 12.2. Random Row Write (Interleaving Banks)
(Burst Length=8, CAS# Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
DQM
DQ
BS0,1
t
CK2
Activate
Command
Bank A
Activate
Command
Bank B
Command
Bank A
DAx0 DAx1DAx2
DAx3DAx4DAx5
DAx6
DAx7 DBx0 DBx1
RAx
RAx
RAy
Write
Command
Bank A
Hi-Z
CAy
High
RBx
Precharge
Command
Bank B
DBx7
DBx2 DBx3
DBx4DBx5 DBx6
CAx
CBx
RBx
RAy
t
RCD
Write
Command
Bank A
Write
Command
BaPrecharge
Activate
Command
Bank A
DAy3
DAy0 DAy1DAy2
DAy4
t
WR*
t
RP
t
WR*
*
t
WR
> t
WR
(min.)
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