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参数资料
| 型号： | T436432B-8SG |
| 厂商： | TM Technology, Inc. |
| 英文描述： | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
| 中文描述： | 200万× 32内存为512k × 32 x 4Banks同步DRAM |
| 文件页数： | 66/72页 |
| 文件大小： | 731K |
| 代理商： | T436432B-8SG |
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TE
CH
tm
T436432B
TM Technology Inc. reserves the right
P. 66
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
Figure 21. Random Row Read (Interleaving Banks)
(Burst Length=2, CAS# Latency=1)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
A10
A0~A9
DQM
DQ
BS0,1
High
t
CK1
Bu0
Bu1Au0
Au1
Bv0 Bv1
Av0
Av1 Bw0 Bw1
Aw0
Aw1Bx0
Bx1
Ax0
Ax1 By0
By1 Ay0 Ay1
Bz0
Activate
Command
Bank B
Read
Bank B
with Auto
Precharge
Activate
Command
Bank A
Read
Bank A
with Auto
Precharge
Activate
Command
Bank B
Read
Bank B
with Auto
Precharge
Activate
Command
Bank A
Read
Bank A
with Auto
Precharge
Activate
Command
Bank B
Read
Bank B
with Auto
Precharge
Activate
Command
Bank A
Read
Bank A
with Auto
Precharge
Activate
Command
Bank B
Read
Bank B
with Auto
Precharge
Activate
Command
Bank A
Read
Bank A
with Auto
Precharge
Activate
Command
Bank B
Read
Bank B
with Auto
Precharge
Activate
Command
Bank A
Read
Bank A
with Auto
Precharge
Activate
Command
Bank B
Read
Bank B
with Auto
Precharge
Activate
Command
Bank A
RBu
RBu
CBu
RAu
RAu CAu
RBv
RBvCBv
RAv
RAv
CAv
RBw
RBwCBw
RAw
RAwCAw
RBx
RBx
CBx
RAx
RAx CAx
RBy
RBy CBy
RAy
RAy CAy
RBz
RBz
CBz
RAz
RAz
tRP
tRP
tRP
tRP
tRP
tRP
tRP
tRP
tRP
tRP
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
Begin Auto
Precharge
Bank B
Begin Auto
Precharge
Bank A
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| T436432B | 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM |
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