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| 型号： | T630 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation hard 16-Bit ParallelError Detection & Correction |
| 中文描述： | 辐射硬16位ParallelError检测 |
| 文件页数： | 10/10页 |
| 文件大小： | 92K |
| 代理商： | T630 |
54HSC/T630
9/10
RADIATION TOLERANCE
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample
devices from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
GEC Plessey Semiconductors can provide radiation
testing compliant with Mil-Std-883 method 1019 Ionizing
Radiation (total dose) test.
ORDERING INFORMATION
For details of reliability, QA/QC, test and assembly
options, see ‘Manufacturing Capability and Quality
Assurance Standards’ Section 9.
Unique Circuit Designator
‘Blank’
R
Q
H *
No tolerance implied
100 kRads (Si) Guaranteed
300 kRads (Si) Guaranteed
1000 kRads (Si) Guaranteed
*HSC Only
Radiation Tolerance
C
F
Ceramic DIL (Solder Seal)
Flatpack (Solder Seal)
Package Type
QA/QCI Process
(See Section 9 Part 4)
Test Process
(See Section 9 Part 3)
Assembly Process
(See Section 9 Part 2)
L
C
D
E
B
S
Rel 0
Rel 1
Rel 2
Rel 3/4/5/STACK
Class B
Class S
Reliability Level
54xHSC/T630xxxxx
Total Dose (Function to specification)*
3x10
5 Rad(Si)
Transient Upset (Stored data loss)
5x10
10 Rad(Si)/sec
Transient Upset (Survivability)
>1x10
12 Rad(Si)/sec
Neutron Hardness (Function to specification)
>1x10
15 n/cm2
Single Event Upset**
<1x10
-10 Errors/bit day
Latch Up
Not possible
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
Figure 11: Radiation Hardness Parameters
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