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参数资料
| 型号： | T630 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation hard 16-Bit ParallelError Detection & Correction |
| 中文描述： | 辐射硬16位ParallelError检测 |
| 文件页数： | 5/10页 |
| 文件大小： | 92K |
| 代理商： | T630 |
54HSC/T630
4/10
Figure 3: Error Detection and Correction Using Two EDAC Units
S1
S0
Function
L
H
Start READ
H
Latch data & flag errors
H
L
Correct data & Output syndrome bits
DC CHARACTERISTICS AND RATINGS
Parameter
Min
Max
Units
Supply Voltage
-0.5
7
V
Input Voltage
VSS-0.3
VDD+0.3
V
Current Through Any Pin
-20
+20
mA
Operating Temperature
-55
125
°C
Storage Temperature
-65
150
°C
Note: Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Table 5: Absolute Maximum Ratings
Subgroup
Definition
1
Static characteristics specified in Table 6 at +25
°C
2
Static characteristics specified in Table 6 at +125
°C
3
Static characteristics specified in Table 6 at -55
°C
9
Switching characteristics specified in Table 7 at +25
°C
10
Switching characteristics specified in Table 7 at +125
°C
11
Switching characteristics specified in Table 7 at -55
°C
DEFINITION OF SUBGROUPS
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