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参数资料
| 型号： | T835-800G |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 晶闸管 |
| 英文描述： | 800 V, 8 A, SNUBBERLESS TRIAC |
| 封装： | D2PAK-3 |
| 文件页数： | 7/12页 |
| 文件大小： | 145K |
| 代理商： | T835-800G |
Characteristics
BTA08, BTB08 and T8 Series
4/12
Doc ID 7472 Rev 7
Figure 1.
Maximum power dissipation versus
rms on-state current (full cycle)
Figure 2.
On-state rms current versus case
temperature (full cycle)
P(W)
0
1
23
45
678
0
1
2
3
4
5
6
7
8
9
10
I
(A)
T(RMS)
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10
I
(A)
T(RMS)
T (°C)
C
BTA
BTB / T8
Figure 3.
On-state rms current versus
ambient temperature (full cycle)
Figure 4.
Relative variation of thermal
impedance versus pulse
duration
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
(A)
T(RMS)
T (°C)
C
DPAK
(S=1CM )
2
DPAK
(S=0.5CM )
2
printed circuit board FR4, copper thickness: 35 m
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
1E-3
1E-2
1E-1
1E+0
K=[Z /R
th
th]
t (s)
p
Zth(j-c)
DPAK/IPAK
Zth(j-a)
TO-220AB/D PAK
2
Zth(j-a)
Figure 5.
On-state characteristics
(maximum values)
Figure 6.
Surge peak on-state current
versus number of cycles
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
I
(A)
TM
V
(V)
TM
T max.
V = 0.85V
R = 50 m
j
to
d
Ω
T=
j
T max.
j
T = 25°C
j
.
1
10
100
1000
0
10
20
30
40
50
60
70
80
90
I
(A)
TSM
Number of cycles
t=20ms
One cycle
Non repetitive
T initial=25°C
j
Repetitive
T =110°C
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| T835-800G-TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8A TRIACS |
| T835-800H | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Snubberless?, logic level and standard 8 A Triacs |
| T835-800H-TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Snubberless?, logic level and standard 8 A Triacs |
| T835-800R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8A TRIACS |
| T835-800R-TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8A TRIACS |
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