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参数资料
| 型号： | TAS5612PHDR |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 音频／视频放大 |
| 英文描述： | 125 W, 2 CHANNEL, AUDIO AMPLIFIER, PQFP64 |
| 封装： | GREEN, HTQFP-64 |
| 文件页数： | 26/26页 |
| 文件大小： | 1718K |
| 代理商： | TAS5612PHDR |
www.ti.com
SLAS710 – JUNE 2010
AUDIO CHARACTERISTICS (PBTL)
Audio performance is recorded as a chipset consisting of a TAS5518 PWM Processor (modulation index limited to 97.7%)
and a TAS5612A power stage. PCB and system configurations are in accordance with recommended guidelines. Audio
frequency = 1kHz, PVDD_X = 32.5V, GVDD_X = 12V, RL = 2, fS = 384kHz, ROC = 30k, TC = 75°C,
Output Filter: LDEM = 7mH, CDEM = 1mF, MODE = 101-00, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RL = 2, 10%, THD+N
250
RL = 3, 10% THD+N
165
RL = 4, 10% THD+N
125
PO
Power output per channel
W
RL = 2, 1% THD+N
210
RL = 3, 1% THD+N
135
RL = 4, 1% THD+N
105
THD+N
Total harmonic distortion + noise
1 W
0.03%
Vn
Output integrated noise
A-weighted, TAS5518 Modulator
120
mV
SNR
Signal to noise ratio(1)
A-weighted, TAS5518 Modulator
103
dB
A-weighted, input level –60 dBFS using
DNR
Dynamic range
103
dB
TAS5518 modulator
Pidle
Power dissipation due to idle losses (IPVDD_X)
PO = 0, 4 channels switching
(2)
1.7
W
(1)
SNR is calculated relative to 1% THD-N output level.
(2)
Actual system idle losses are affected by core losses of output inductors.
ELECTRICAL CHARACTERISTICS
PVDD_X = 32.5V, GVDD_X = 12V, VDD = 12V, TC (Case temperature) = 75°C, fS = 384kHz, unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION
Voltage regulator, only used as reference
VREG
VDD = 12V
3
3.3
3.6
V
node, VREG
VI_CM
Analog comparator reference node, VI_CM
1.5
1.75
1.9
V
Operating, 50% duty cycle
20
IVDD
VDD supply current
mA
Idle, reset mode
20
50% duty cycle
10
IGVDD_x
Gate-supply current per half-bridge
mA
Reset mode
1.5
50% duty cycle without output filter or
15
mA
load
IPVDD_x
Half-bridge idle current
Reset mode, No switching
540
mA
OUTPUT-STAGE MOSFETs
Drain-to-source resistance, low side (LS)
TJ = 25°C, excludes metallization
60
100
m
resistance,
RDS(on)
Drain-to-source resistance, high side (HS)
60
100
m
GVDD = 12V
Copyright 2010, Texas Instruments Incorporated
9
Product Folder Link(s): TAS5612A
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