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参数资料
| 型号： | TB28F800BV-B80 |
| 厂商： | INTEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 1M X 8 FLASH 5V PROM, 80 ns, PDSO44 |
| 封装： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件页数： | 22/55页 |
| 文件大小： | 638K |
| 代理商： | TB28F800BV-B80 |
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2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
22
SEE NEW DESIGN RECOMMENDATIONS
3.3.4.1
Suspending and Resuming Erase
Since an erase operation requires on the order of
seconds to complete, an Erase Suspend command
is provided to allow erase-sequence interruption in
order to read data from another block of the
memory. Once the erase sequence is started,
writing the Erase Suspend command to the CUI
requests that the WSM pause the erase sequence
at a predetermined point in the erase algorithm. The
status register will indicate if/when the erase
operation has been suspended.
At this point, a Read Array command can be written
to the CUI in order to read data from blocks other
than that which is being suspended. The only other
valid command at this time is the Erase Resume
command or Read Status Register command.
During erase suspend mode, the chip can go into a
pseudo-standby mode by taking CE# to V
IH
, which
reduces active current draw.
To resume the erase operation, enable the chip by
taking CE# to V
IL
, then issuing the Erase Resume
command, which continues the erase sequence to
completion. As with the end of a standard erase
operation, the status register must be read, cleared,
and the next instruction issued in order to continue.
3.4
Boot Block Locking
The boot block family architecture features a
hardware-lockable boot block so that the kernel
code for the system can be kept secure while the
parameter and main blocks are programmed and
erased independently as necessary. Only the boot
block can be locked independently from the other
blocks. The truth table, Table 9, clearly defines the
write protection methods.
3.4.1
V
= V
FOR COMPLETE
PROTECTION
For complete write protection of all blocks in the
flash device, the V
PP
programming voltage can be
held low. When V
is below V
, any program or
erase operation will result in a error in the status
register.
3.4.2
WP# = V
IL
FOR BOOT BLOCK
LOCKING
When WP# = V
IL
, the boot block is locked and any
program or erase operation to the boot block will
result in an error in the status register. All other
blocks remain unlocked in this condition and can be
programmed or erased normally. Note that this
feature is overridden and the boot block unlocked
when RP# = V
HH
.
3.4.3
RP# = V
OR WP# = V
IH
FOR BOOT
BLOCK UNLOCKING
Two methods can be used to unlock the boot block:
1.
WP# = V
IH
2.
RP# = V
HH
If both or either of these two conditions are met, the
boot block will be unlocked and can be
programmed or erased.
3.4.4
UPGRADE NOTE FOR 8-MBIT
44-PSOP PACKAGE
If upgradability to 8 Mbit is required, note that the
8-Mbit in the 44-PSOP does not have a WP#
because no pins were available for the 8-Mbit
upgrade address. Thus, in this density-package
combination only, V
HH
(12 V) on RP# is required to
unlock the boot block. Unlocking with a logic-level
signal is not possible. If this functionality is
required, and 12 V is not available, consider using
the 48-TSOP package, which has a WP# pin and
can be unlocked with a logic-level signal. All other
density-package combinations have WP# pins.
Table 9. Write Protection Truth Table
V
PP
RP#
WP#
Write Protection
Provided
V
IL
X
X
All Blocks Locked
≥
V
PPLK
V
IL
X
All Blocks Locked
(Reset)
≥
V
PPLK
V
HH
X
All Blocks Unlocked
≥
V
PPLK
V
IH
V
IL
Boot Block Locked
≥
V
PPLK
V
IH
V
IH
All Blocks Unlocked
相关PDF资料 |
PDF描述 |
|---|---|
| TB28F800BV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800BVB90 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800BVT90 | 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-B80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-T60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TB28F800BVB90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800BV-T60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800BV-T80 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800BVT90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TB28F800CV-B60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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