参数资料
| 型号： | TB3100M-13-F |
| 厂商： | Diodes Inc |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | THYRISTOR PROTECT BIDIR 50A SMB |
| 其它图纸： | TB Series SMB Side TB Series SMB Top |
| 标准包装： | 1 |
| 电压 - 击穿： | 350V |
| 电压 - 断路： | 275V |
| 电压 - 导通状态： | 3.5V |
| 电流 - 峰值脉冲(8 x 20µs)： | 250A |
| 电流 - 峰值脉冲(10 x 1000µs)： | 50A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 1 |
| 电容： | 60pF |
| 封装/外壳： | DO-214AA，SMB |
| 包装： | 标准包装 |
| 产品目录页面： | 2368 (CN2011-ZH PDF) |
| 其它名称： | TB3100M-FDIDKR |
TB0640M - TB3500M
Electrical Characteristics
@T A = 25°C unless otherwise specified
Part Number
Maximum
Rated
Repetitive
Off-State
Voltage
Maximum
Off-State
Leakage
Current @
V DRM
Maximum
Breakover
Voltage
Maximum
On-State
Voltage
@ I T = 1A
Breakover
Current
I BO
Holding Current
I H
Typical
Off-State
Capacitance
Marking
Code
V DRM (V)
I DRM (uA)
V BO (V)
V T (V)
Min
(mA)
Max
(mA)
Min
(mA)
Max
(mA)
C O (pF)
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
58
65
75
90
120
140
160
190
220
275
320
5
5
5
5
5
5
5
5
5
5
5
77
88
98
130
160
180
220
265
300
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
50
50
50
50
50
50
50
50
50
50
50
800
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
800
800
800
800
800
800
800
800
800
800
800
140
140
140
90
90
90
90
60
60
60
60
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M
Symbol
V DRM
I DRM
V BR
I BR
V BO
I BO
I H
V T
I PP
C O
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current Note 4
On state voltage
Peak pulse current
Off-state capacitance Note 5
Notes:
4. I H > (V L /R L ) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not
exceed 30ms.
5. Off-state capacitance measured at f = 1.0MHz, 1.0V RMS signal, V R = 2V DC bias.
I
I PP
I BO
I H
I BR
I DRM
V T
V BR
V
V DRM
V BO
TB0640M - TB3500M
Document number: DS30361 Rev. 10 - 2
3 of 6
November 2011
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| SSW-105-01-T-S | CONN RCPT .100" 5POS SNGL TIN |
| TSW-117-08-G-S | CONN HEADER 17POS .100" SGL GOLD |
| SSQ-103-02-T-S-RA | CONN RCPT .100" 3POS SGL R/A TIN |
| TISP4070H3BJR-S | SURGE SUPP 58V BIDIR DO-214AA |
| TB2300L-13-F | THYRISTOR PROTECT BIDIR 30A SMB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TB3100M-TR | 制造商:LITEON-SEMI 功能描述:100A 35V TSPD |
| TB310G | 制造商:TAITRON 制造商全称:TAITRON Components Incorporated 功能描述:3.0A Glass Passivated Bridge Rectifier |
| TB31202 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC |
| TB31202FN | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC |
| TB31202FNG | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:PLL EREQUENCY SYNTHESIZER |
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