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参数资料
| 型号： | TB3100M |
| 厂商： | Diodes Inc. |
| 英文描述： | 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| 中文描述： | 50A条的双向表面贴装晶闸管浪涌保护器 |
| 文件页数： | 2/4页 |
| 文件大小： | 187K |
| 代理商： | TB3100M |
DS30361 Rev. 2 - 1
2 of 4
TB0640M - TB3500M
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
V
DRM
Breakover
Voltage
On-State
Voltage
@ I
T
= 1A
Breakover
Current
I
BO
Holding Current
I
H
Off-State
Capacitance
Marking Code
V
DRM
(V)
I
DRM
(uA)
V
BO
(V)
V
T
(V)
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max
(mA)
800
800
800
800
800
800
800
800
800
800
800
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max (mA)
C
O
(pF)
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
58
65
75
90
120
140
160
190
220
275
320
5
5
5
5
5
5
5
5
5
5
5
77
88
98
130
160
180
220
265
300
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
800
800
800
800
800
800
800
800
800
800
800
140
140
140
90
90
90
90
60
60
60
60
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current NOTE: 1
On state voltage
Peak pulse current
Off-state capacitance NOTE: 2
Notes:
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
RMS
signal, V
R
= 2V
DC
bias.
1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
I
BO
V
BR
V
DRM
V
T
V
BO
I
H
I
V
I
BR
I
DRM
I
PP
C
U
D
O
R
P
W
E
N
UNDER DEVELOPMENT
相关PDF资料 |
PDF描述 |
|---|---|
| TB3100M-13 | Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket |
| TB3500H | 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB3500H-13 | Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin |
| TB3500L-13 | 30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB3500L | 30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| TB3100M-13 | 功能描述:硅对称二端开关元件 50A 275V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TB3100M-13-F | 功能描述:硅对称二端开关元件 50A 275V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA |
| TB3100M-TR | 制造商:LITEON-SEMI 功能描述:100A 35V TSPD |
| TB310G | 制造商:TAITRON 制造商全称:TAITRON Components Incorporated 功能描述:3.0A Glass Passivated Bridge Rectifier |
| TB31202 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC |
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