参数资料
型号: TB3100M
厂商: Diodes Inc.
英文描述: 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
中文描述: 50A条的双向表面贴装晶闸管浪涌保护器
文件页数: 3/4页
文件大小: 187K
代理商: TB3100M
DS30361 Rev. 2 - 1
3 of 4
TB0640M - TB3500M
0.9
T , JUNCTION TEMPERATURE (°C)
J
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
V
= (T )
BR
J
V
= (T = 25°C)
BR
J
0.95
1
1.05
1.1
1.15
1.2
-50
-25
0
25
50
75
100 125 150 175
NORMALIZED BREAKDOWN VOLTAGE
1
1.05
0.95
-50
NORMALIZED BREAKDOWN VOLTAGE
T , JUNCTION TEMPERATURE (oC)
J
Fig. 3 Relative Variation of Breakover Voltage
vs. Junction Temperature
1.1
-25
0
75
50
25
125
100
175
150
V
= (T )
BO
J
V
= (T = 25°C)
BO
J
1
10
100
1
1.5
3
2.5
2
4
3.5
5
4.5
I , ON-STATE CURRENT (A)
T
V , ON-STATE VOLTAGE (V)
T
Fig. 4 On-State Current vs. On-State Voltage
T = 25°C
j
I
, OFF-STATE CURRENT (uA)
(DRM)
T , JUNCTION TEMPERATURE (°C)
J
Fig. 1 Off-State Current vs. Junction Temperature
0.001
0.01
1
0.1
10
100
-25
0
25
50
75
100
125
150
V
= 50V
DRM
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.4
1.3
1.2
-50
-25
0
25
50
100
75
125
NORMALIZED HOLDING CURRENT
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 Relative Variation of Holding Current vs.
Junction Temperature
I = (T )
H
J
I
= (T = 25°C)
H
J
0.1
1
1
10
100
NORMALIZED CAPACITANCE
V , REVERSE VOLTAGE (V)
R
Fig. 6 Relative Variation of Junction Capacitance
vs. Reverse Voltage Bias
C = (V )
O
R
C
= (V = 1V)
O
R
T = 25°C
j
f = 1 Mhz
V
RMS
= 1V
C
U
D
O
R
P
W
E
N
UNDER DEVELOPMENT
相关PDF资料
PDF描述
TB3100M-13 Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket
TB3500H 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB3500H-13 Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin
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TB3500L 30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
相关代理商/技术参数
参数描述
TB3100M-13 功能描述:硅对称二端开关元件 50A 275V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TB3100M-13-F 功能描述:硅对称二端开关元件 50A 275V RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TB3100M-TR 制造商:LITEON-SEMI 功能描述:100A 35V TSPD
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