参数资料
型号: TC1301B-UWAVMF
厂商: Microchip Technology Inc.
英文描述: Dual LDO with Microcontroller RESET Function
中文描述: 双路LDO稳压器与微控制器的复位功能
文件页数: 17/28页
文件大小: 890K
代理商: TC1301B-UWAVMF
2005 Microchip Technology Inc.
DS21798B-page 17
TC1301A/B
6.0
APPLICATION CIRCUITS/
ISSUES
6.1
Typical Application
The TC1301A/B is used for applications that require
the integration of two LDO’s and a microcontroller
RESET.
FIGURE 6-1:
TC1301A/B.
Typical Application Circuit
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
The internal power dissipation within the TC1301A/B is
a function of input voltage, output voltage, output
current and quiescent current. The following equation
can be used to calculate the internal power dissipation
for each LDO.
POWER DISSIPATION
EQUATION 6-1:
In addition to the LDO pass element power dissipation,
there is power dissipation within the TC1301A/B as a
result of quiescent or ground current. The power
dissipation as a result of the ground current can be
calculated using the following equation. The V
IN
pin
quiescent current and the V
DET
pin current are both
considered. The V
IN
current is a result of LDO
quiescent current, while the V
DET
current is a result of
the voltage detector current.
EQUATION 6-2:
The total power dissipated within the TC1301A/B is the
sum of the power dissipated in both of the LDO’s and
the P(I
GND
) term. Because of the CMOS construction,
the typical I
GND
for the TC1301A/B is 116 μA.
Operating at a maximum of 4.2V results in a power
dissipation of 0.5 milliWatts. For most applications, this
is small compared to the LDO pass device power
dissipation and can be neglected.
The
maximum
continuous
temperature specified for the TC1301A/B is 125
°
C
.
To
estimate the internal junction temperature of the
TC1301A/B, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R
θ
JA
) of the device. The thermal resistance
from junction to ambient for the 3X3DFN8 pin package
is estimated at 41
°
C/W.
operating
junction
EQUATION 6-3:
Package Type = 3X3DFN8
Input Voltage Range = 2.7V to 4.2V
V
IN
maximum = 4.2V
V
IN
typical = 3.6V
V
OUT1
= 300 mA maximum
V
OUT2
= 150 mA maximum
System RESET Load = 10 k
Ω
8
4
1
2
3
RESET
GND
V
DET
V
IN
7
V
OUT2
6
BATTERY
C
1 μF Ceramic
X5R
IN
C
TC1301A
C
OUT2
1 μF Ceramic
X5R
C
10 nF Ceramic
Bypass
2.7V
to
4.2V
SHDN2
ON/OFF Control V
OUT2
System RESET
2.8V @ 300 mA
1.8V
@ 150 mA
5
V
OUT1
8
4
1
2
3
RESET
BATTERY
C
OUT1
1 μF Ceramic
X5R
IN
C
TC1301B
C
1 μF Ceramic
X5R
Bypass
V
IN
7
2.7V
to
4.2V
V
OUT2
6
SHDN2
ON/OFF Control V
OUT2
System RESET
2.8V @ 300 mA
1.8V
@ 150 mA
5
ON/OFF Control V
OUT1
V
OUT1
GND
SHDN1
P
LDO
V
IN MAX
)
)
V
OUT MIN
)
(
)
I
OUT MAX
)
)
×
=
P
LDO
= LDO Pass device internal power
dissipation
V
IN(MAX)
= Maximum input voltage
V
OUT(MIN)
= LDO minimum output voltage
P
I GND
)
V
IN MAX
)
I
VIN
I
VDET
+
(
)
×
=
P
I(GND)
= Total current in ground pin.
V
IN(MAX)
= Maximum input voltage.
I
VIN
= Current flowing in the V
IN
pin with no
output current on either LDO output.
I
VDET
= Current in the V
DET
pin with
RESET loaded.
T
J MAX
)
P
TOTAL
R
θ
JA
×
T
AMAX
+
=
T
J(MAX)
= Maximum continuous junction
temperature.
P
TOTAL
= Total device power dissipation.
R
θ
JA
= Thermal resistance from junction-to-
ambient.
T
AMAX
= Maximum ambient temperature.
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