参数资料
型号: TC1410EOA713
厂商: Microchip Technology
文件页数: 7/16页
文件大小: 0K
描述: IC MOSFET DVR .5A HS INV 8SOIC
标准包装: 3,300
配置: 低端
输入类型: 反相
延迟时间: 30ns
电流 - 峰: 500mA
配置数: 1
输出数: 1
电源电压: 4.5 V ~ 16 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
TC1410/TC1410N
3.0
PIN DESCRIPTIONS
3.3
CMOS Push-Pull Output
The descriptions of the pins are listed in Table 3-1.
(OUTPUT)
The MOSFET driver output is a low-impedance,
TABLE 3-1:
PIN FUNCTION TABLE
CMOS, push-pull style output, capable of driving a
capacitive load with 0.5 A peak currents.
Pin No.
Symbol
Description
1
V DD
Supply input, 4.5V to 16V
3.4
Ground
2
3
4
5
6
INPUT
NC
GND
GND
OUTPUT
Control input
No connection
Ground
Ground
CMOS push-pull output, common
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
to pin 7
7
8
OUTPUT
V DD
CMOS push-pull output, common
to pin 6
Supply input, 4.5V to 16V
3.1
Supply Input (V DD )
The V DD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 16V with respect to the ground
pin. The V DD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A value of 1.0 μF is suggested.
3.2
Control Input (INPUT)
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
? 2003 Microchip Technology Inc.
DS21389C-page 7
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