参数资料
型号: TC1411VPA
厂商: Microchip Technology
文件页数: 3/18页
文件大小: 0K
描述: IC MOSFET DVR 1A HS INV 8DIP
标准包装: 60
配置: 低端
输入类型: 反相
延迟时间: 30ns
电流 - 峰: 1A
配置数: 1
输出数: 1
电源电压: 4.5 V ~ 16 V
工作温度: -40°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
TC1411/TC1411N
1.0
ELECTRICAL
CHARACTERISTICS
? Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
Absolute Maximum Ratings ?
Supply Voltage ..................................................... +20V
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Input Voltage ...................... V DD + 0.3V to GND – 5.0V
Power Dissipation (T A ≤ 70°C)
MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Storage Temperature Range .............. -65°C to +150°C
Maximum Junction Temperature ...................... +150°C
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ V DD ≤ 16V.
Typical values are measured at T A = +25°C, V DD = 16V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.0
0.8
V
V
Input Current
I IN
-1.0
1.0
μA
0V ≤ V IN ≤ V DD, T A = +25°C
-10
10
-40°C ≤ T A ≤ +85°C
Output
High Output Voltage
Low Output Voltage
Output Resistance
V OH
V OL
R O
V DD – 0.025
8
0.025
11
V
V
Ω
DC Test
DC Test
V DD = 16V, I O = 10 mA, T A = +25°C
10
10
14
14
0°C ≤ T A ≤ +70°C
-40°C ≤ T A ≤ +85°C
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
I PK
I REV
1.0
0.5
A
A
V DD = 16V
Duty cycle ≤ 2%, t ≤ 300 μs,
V DD = 16V
Switching Time (Note 1)
Rise Time
t R
25
35
ns
T A = +25°C
27
29
40
40
0°C ≤ T A ≤ +70°C
-40°C ≤ T A ≤ +85°C, Figure 4-1
Fall Time
t F
25
35
ns
T A = +25°C
27
29
40
40
0°C ≤ T A ≤ +70°C
-40°C ≤ T A ≤ +85°C, Figure 4-1
Delay Time
t D1
30
40
ns
T A = +25°C,
33
35
45
45
0°C ≤ T A ≤ +70°C
-40°C ≤ T A ≤ +85°C, Figure 4-1
Delay Time
t D2
30
40
ns
T A = +25°C
33
35
45
45
0°C ≤ T A ≤ +70°C
-40°C ≤ T A ≤ +85°C, Figure 4-1
Power Supply
Power Supply Current
I S
0.5
1.0
mA
V IN = 3V, V DD = 16V
Note 1:
Switching times ensured by design.
? 2006 Microchip Technology Inc.
0.1
0.15
V IN = 0V
DS21390D-page 3
相关PDF资料
PDF描述
T95S475M010CZAL CAP TANT 4.7UF 10V 20% 1507
T95S475K6R3CZAL CAP TANT 4.7UF 6.3V 10% 1507
R1D12-1205 CONV DC/DC 1W 12VIN +/-05VOUT
NR6028T2R2N INDUCTOR 2.2UH 4.2A 30% SMD
TC1411NVPA IC MOSFET DVR 1A HS N-INV 8DIP
相关代理商/技术参数
参数描述
TC1411VUA 功能描述:功率驱动器IC 1.0A Sngl MOSFET Drvr Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC1411VUA713 功能描述:功率驱动器IC 1.0A Sngl MOSFET Drvr Inv RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC1412 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2A High-Speed MOSFET Drivers
TC1412_03 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2A High-Speed MOSFET Drivers
TC1412_13 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:2A High-Speed MOSFET Drivers