参数资料
型号: TC1412EPA
厂商: Microchip Technology
文件页数: 5/16页
文件大小: 0K
描述: IC MOSFET DVR 2A HS INV 8DIP
标准包装: 60
配置: 低端
输入类型: 反相
延迟时间: 35ns
电流 - 峰: 2A
配置数: 1
输出数: 1
电源电压: 4.5 V ~ 16 V
工作温度: -40°C ~ 85°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
TC1412/TC1412N
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, over operating temperature range with 4.5V ≤ V DD ≤ 16V.
500
T A = +25 ° C
500
V IN = 3V
V SUPPLY = 16V
400
300
200
V IN = 3V
400
300
200
100
V IN = 0V
100
V IN = 0V
0
4
6
8
10
12
14
16
0
-40
-20
0
20
40
60
80
V DD (V)
TEMPERATURE ( ° C)
FIGURE 2-1:
vs. Supply Voltage.
Quiescent Supply Current
FIGURE 2-4:
vs. Temperature.
Quiescent Supply Current
1.6
T A = +25 ° C
1.6
V SUPPLY = 16V
1.5
1.4
1.3
V IH
1.5
1.4
1.3
V IH
1.2
V IL
1.2
V IL
1.1
4
6
8
10
12
14
16
1.1
-40
-20
0
20
40
60
80
V DD (V)
TEMPERATURE ( ° C)
FIGURE 2-2:
Voltage.
13
11
Input Threshold vs. Supply
FIGURE 2-5:
Temperature.
13
11
Input Threshold vs.
9
7
5
3
T A = +85 ° C
T A = -40 ° C
T A = +25 ° C
9
7
5
3
T A = +85 ° C
T A = +25 ° C
T A = -40 ° C
1
1
4
6
8
10
12
14
16
4
6
8
10
12
14
16
V DD (V)
V DD (V)
FIGURE 2-3:
High-State Output
FIGURE 2-6:
Low-State Output
Resistance vs. Supply Voltage.
? 2003 Microchip Technology Inc.
Resistance vs. Supply Voltage.
DS21391C-page 5
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