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| 型号： | TC429MJA |
| 厂商： | Microchip Technology |
| 文件页数： | 10/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 6A HS 8CDIP |
| 标准包装： | 56 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 53ns |
| 电流 - 峰： | 6A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 7 V ~ 18 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-CDIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-CERDIP |
| 包装： | 管件 |
TC429
P C = fCV S
The device capacitive load dissipation is:
EQUATION
2
Note:
Ambient operating temperature should not
exceed +85oC for EPA or EOA devices or
+125oC for MJA devices.
Where:
f = Switching frequency
C = Capacitive load
V S = Supply voltage
Quiescent power dissipation depends on input signal
duty cycle. A logic low input results in a low-power
dissipation mode with only 0.5 mA total current drain.
Logic-high signals raise the current to 5 mA maximum.
TABLE 4-1:
V S
18V
15V
10V
5V
MAXIMUM OPERATING
FREQUENCIES
f MAX
500 kHz
700 kHz
1.3 MHz
>2 MHz
The quiescent power dissipation is:
EQUATION
P Q = V S ( D ( I H ) + ( 1 – D ) IL )
Where:
I H = Quiescent current with input high
(5 mA max)
Conditions:
1. CERDIP Package ( θ JA =150 ° C/W)
2. T A = +25 ° C
3. C L = 2500 pF
I L = Quiescent current with input low
(0.5 mA max)
D = Duty cycle
5V/DIV
500mV/DIV
(5 AMP/DIV)
INPUT
Transition power dissipation arises because the output
stage N- and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes.
The device transition power dissipation is approxi-
OUTPUT
V S = 18V
R L = 0.1 ?
mately:
5V
500mV
5 μ s
= fV ? 3.3 × 10
A ? Sec ?
EQUATION
P
T
– 9
S ? ?
FIGURE 4-5:
TIME (5 μ s/DIV)
Peak Output Current
Capability.
An example shows the relative magnitude for each
item.
4.5
POWER-ON OSCILLATION
C
V S
D
f
= 2500 pF
= 15V
= 50%
= 200 kHz
Note:
It is extremely important that all MOSFET
driver applications be evaluated for the
possibility of having high-power oscillations
occur during the power-on cycle.
P D = Package power dissipation:
= P C + P T + P Q
= 113 mW + 10 mW + 41 mW
= 164 mW
Maximum ambient operating temperature:
= T J – θ JA (P D )
= 150oC - (150oC/W)(0.164W)
= 125 ° C
Where:
Power-on oscillations are due to trace size, layout and
component placement. A ‘quick fix’ for most applica-
tions that exhibit power-on oscillation problems is to
place approximately 10 k ? in series with the input of
the MOSFET driver.
T J
θ JA
= Maximum allowable junction temperature
(+150 ° C)
= Junction-to-ambient thermal resistance
(150 ° C/W, CERDIP)
DS21416C-page 10
? 2003 Microchip Technology Inc.
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