参数资料
型号: TC4422AVOA713
厂商: Microchip Technology
文件页数: 3/22页
文件大小: 0K
描述: IC MOSFET DRVR 9A N-INV 8SOIC
标准包装: 3,300
配置: 低端
输入类型: 非反相
延迟时间: 38ns
电流 - 峰: 10A
配置数: 1
输出数: 1
电源电压: 4.5 V ~ 18 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
TC4421A/TC4422A
1.0
ELECTRICAL
CHARACTERISTICS
? Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
Absolute Maximum Ratings ?
Supply Voltage ..................................................... +20V
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Input Voltage .................... (V DD + 0.3V) to (GND – 5V)
Input Current (V IN > V DD )................................... 50 mA
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T A = +25°C with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
1.8
1.3
0.8
V
V
Input Current
Input Voltage
I IN
V IN
–10
–5
+10
V DD – 0.3
μA
V
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
V OH
V OL
R OH
R OL
I PK
I DC
V DD – 0.025
2
1.25
0.8
10.0
0.025
1.5
1.1
V
V
Ω
Ω
A
A
DC Test
DC Test
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
V DD = 18V
10V ≤ V DD ≤ 18V, T A = +25°C
( TC4421A/TC4422A CAT only)
(Note 2)
Latch-Up Protection
I REV
>1.5
A
Duty cycle ≤ 2%, t ≤ 300 μsec
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
t R
t F
t D1
t D2
28
26
38
42
34
32
45
49
ns
ns
ns
ns
Figure 4-1 , C L = 10,000 pF
Figure 4-1 , C L = 10,000 pF
Figure 4-1 , C L = 10,000 pF
Figure 4-1 , C L = 10,000 pF
Power Supply
Power Supply Current
Operating Input Voltage
I S
V DD
4.5
130
35
250
100
18
μA
μA
V
V IN = 3V
V IN = 0V
Note 1:
2:
Switching times ensured by design.
Tested during characterization, not production tested.
? 2005 Microchip Technology Inc.
DS21946A-page 3
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