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| 型号： | TC4422AVOA713 |
| 厂商： | Microchip Technology |
| 文件页数： | 5/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR 9A N-INV 8SOIC |
| 标准包装： | 3,300 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 38ns |
| 电流 - 峰： | 10A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
TC4421A/TC4422A
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, T A = +25°C with 4.5V ≤ V DD ≤ 18V.
180
300
100 pF
160
140
120
100
80
60
40
20
0
22,000 pF
10,000 pF
1,000 pF
250
200
150
100
50
0
10V
5V
15V
4
6
8
10
12
14
16
18
100
1000
10000
100000
Supply Voltage (V)
Capacitive Load (pF)
FIGURE 2-1:
Voltage.
300
250
200
150
Rise Time vs. Supply
5V
10V
FIGURE 2-4:
Load.
55
V DD = 15V
50
45
40
t RISE
Fall Time vs. Capacitive
35
100
50
0
15V
30
25
20
t FALL
100
1000
10000
100000
-40 -25 -10
5
20 35 50 65 80 95 110 125
Capacitive Load (pF)
Temperature (°C)
FIGURE 2-2:
Load.
180
Rise Time vs. Capacitive
FIGURE 2-5:
Temperature.
10
1E-7
Rise and Fall Times vs.
160
140
120
100
80
60
40
22,000 pF
10,000 pF
10
1E-8
20
0
1,000 pF
100 pF
10
1E-9
4
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-3:
Fall Time vs. Supply
FIGURE 2-6:
Crossover Energy vs Supply
Voltage.
? 2005 Microchip Technology Inc.
Voltage.
DS21946A-page 5
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