参数资料
型号: TC4425MJA
厂商: Microchip Technology
文件页数: 3/18页
文件大小: 0K
描述: IC MOSFET DVR 3A DUAL HS 8-CDIP
标准包装: 56
配置: 低端
输入类型: 反相和非反相
延迟时间: 33ns
电流 - 峰: 3A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 18 V
工作温度: -55°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-CDIP(0.300",7.62mm)
供应商设备封装: 8-CERDIP
包装: 管件
TC4423M/TC4424M/TC4425M
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
Supply Voltage ................................................................+22V
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Input Voltage, IN A or IN B .......... (V DD + 0.3V) to (GND – 5V)
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T A = +25°C, with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
0.8
V
V
Input Current
I IN
-1
1
μA
0V ≤ V IN ≤ V DD
Output
High Output Voltage
V OH
V DD –
V
0.025
Low Output Voltage
V OL
0.025
V
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection Withstand
R OH
R OL
I PK
I REV
2.8
3.5
3
>1.5
5
5
Ω
Ω
A
A
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
Duty cycle ≤ 2%, t ≤ 300 μsec.
Reverse Current
Switching Time (Note 1)
Rise Time
t R
23
35
ns
Figure 4-1 , Figure 4-2 ,
C L = 1800 pF
Fall Time
t F
25
35
ns
Figure 4-1 , Figure 4-2 ,
C L = 1800 pF
Delay Time
t D1
33
75
ns
Figure 4-1 , Figure 4-2 ,
C L = 1800 pF
Delay Time
t D2
38
75
ns
Figure 4-1 , Figure 4-2 ,
C L = 1800 pF
Power Supply
Power Supply Current
I S
1.5
2.5
mA
V IN = 3V (Both inputs)
Note 1:
Switching times ensured by design.
? 2005 Microchip Technology Inc.
0.15
0.25
V IN = 0V (Both inputs)
DS21937A-page 3
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