参数资料
型号: TC4425MJA
厂商: Microchip Technology
文件页数: 9/18页
文件大小: 0K
描述: IC MOSFET DVR 3A DUAL HS 8-CDIP
标准包装: 56
配置: 低端
输入类型: 反相和非反相
延迟时间: 33ns
电流 - 峰: 3A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 18 V
工作温度: -55°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-CDIP(0.300",7.62mm)
供应商设备封装: 8-CERDIP
包装: 管件
TC4423M/TC4424M/TC4425M
3.0
PIN DESCRIPTIONS
3.4
Output A (OUT A)
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
8-Pin
Symbol Description
CERDIP
OUT A is a CMOS, push-pull output that is capable of
sourcing and sinking 3A peaks of current (V DD = 18V).
The low output impedance ensures the gate of the
external MOSFET will stay in the intended state even
during large transients. This output also has a reverse
current latch-up rating of 1.5A.
1
2
NC
IN A
No connection
Input A
3.5
Supply Input (V DD )
3
4
5
6
7
GND
IN B
OUT B
V DD
OUT A
Ground
Input B
Output B
Supply input
Output A
V DD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local ceramic capacitor.
This bypass capacitor provides a localized low-
impedance path for the peak currents that are to be
provided to the load.
8
NC
No connection
3.6
Ground (GND)
GND is the device return pin. The ground pin(s) should
3.1
Input A (IN A)
have a low-impedance connection to the bias supply
source return. High peak currents will flow out the
IN A is a TTL/CMOS-compatible input that controls
OUT A. This input has 300 mV of hysteresis between
the high and low input levels that allows it to be driven
from slow rising and falling signals, as well as providing
noise immunity.
ground pin(s) when the capacitive load is being
discharged.
3.2
Input B (IN B)
IN B is a TTL/CMOS-compatible input that controls
OUT B. This input has 300 mV of hysteresis between
the high and low input levels that allows it to be driven
from slow rising and falling signals, as well as providing
noise immunity.
3.3
Output B (OUT B)
OUT B is a CMOS push-pull output that is capable of
sourcing and sinking 3A peaks of current (V DD = 18V).
The low output impedance ensures the gate of the
external MOSFET will stay in the intended state even
during large transients. This output also has a reverse
current latch-up rating of 1.5A.
? 2005 Microchip Technology Inc.
DS21937A-page 9
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