参数资料
型号: TC4427COA713
厂商: Microchip Technology
文件页数: 5/20页
文件大小: 0K
描述: IC MOSFET DVR 1.5A DUAL HS 8SOIC
标准包装: 1
配置: 低端
输入类型: 非反相
延迟时间: 20ns
电流 - 峰: 1.5A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 18 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 671 (CN2011-ZH PDF)
其它名称: TC4427COA713DKR
TC4426/TC4427/TC4428
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, T A = +25oC with 4.5V ≤ V DD ≤ 18V.
100
2200 pF
100
2200 pF
80
1500 pF
80
1500 pF
60
40
1000 pF
470 pF
60
40
1000 pF
470 pF
20
0
100 pF
20
0
100 pF
4
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
VDD (V)
VDD (V)
FIGURE 2-1:
Voltage.
100
80
60
Rise Time vs. Supply
5V
10V
FIGURE 2-4:
Voltage.
100
80
60
Fall Time vs. Supply
5V
10V
40
20
0
15V
40
20
0
15V
100
1000
10,000
100
1000
10,000
C LOAD (pF)
C LOAD (pF)
FIGURE 2-2:
Load.
60
50
Rise Time vs. Capacitive
C LOAD = 1000 pF
V DD = 17.5V
FIGURE 2-5:
Load.
80
75
70
Fall Time vs. Capacitive
C LOAD = 1000 pF
V IN = 5V
65
60
40
55
50
45
t D2
30
40
tFALL
35
30
t D1
20
tRISE
25
20
10
4
6
8
10
12
14
16
18
–55 –35 –15
5 25 45 65
Temperature (?C)
85
105 125
V DD (V)
FIGURE 2-3:
Rise and Fall Times vs.
FIGURE 2-6:
Propagation Delay Time vs.
Temperature.
? 2006 Microchip Technology Inc.
Supply Voltage.
DS21422D-page 5
相关PDF资料
PDF描述
BRC2016T680K INDUCTOR 68UH 0806 10% SMD
BRC2016T101K INDUCTOR 100UH 140MA 0806 SMD
13R225C INDUCTOR RADIAL 2.2MH 0.24A
GSM06DSEN CONN EDGECARD 12POS .156 EYELET
BRC2016T1R0M INDUCTOR 1.0UH 1.35A 0806 SMD
相关代理商/技术参数
参数描述
TC4427CPA 功能描述:功率驱动器IC 1.5A Dual MOSFET Dr NonInver Ctemp PDIP8 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4427CPA 制造商:Microchip Technology Inc 功能描述:FET DRIVER DUAL 1.5A 4427 DIP8
TC4427CPA 制造商:Microchip Technology Inc 功能描述:IC MOSFET DRIVER LOW SIDE DIP-8
TC4427CPA 制造商:Microchip Technology Inc 功能描述:ICS MOS DRIVERS DRIVER TYPE:MOSFET
TC4427CPAG 功能描述:功率驱动器IC 1.5A Dual Lead Free Package RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube