参数资料
型号: TC4427MJA
厂商: Microchip Technology
文件页数: 3/18页
文件大小: 0K
描述: IC MOSFET DVR 1.5A DUAL HS 8CDIP
标准包装: 56
配置: 低端
输入类型: 非反相
延迟时间: 20ns
电流 - 峰: 1.5A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 18 V
工作温度: -55°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-CDIP(0.300",7.62mm)
供应商设备封装: 8-CERDIP
包装: 管件
其它名称: 154793
Q1154793
TC4426M/TC4427M/TC4428M
1.0
ELECTRICAL
CHARACTERISTICS
? Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
Absolute Maximum Ratings ?
Supply Voltage ................................................................+22V
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Input Voltage, IN A or IN B .......... (V DD + 0.3V) to (GND – 5V)
Storage Temperature Range .........................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, T A = +25oC with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
0.8
V
V
Input Current
I IN
-1.0
+1.0
μA
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
V OH
V OL
R O
I PK
I REV
V DD – 0.025
7
1.5
>0.5
0.025
10
V
V
Ω
A
A
DC TEST
DC TEST
I OUT = 10 mA, V DD = 18V
V DD = 18V
Duty cycle ≤ 2%, t ≤ 300 μs
Withstand Reverse Current
Switching Time (Note 1)
V DD = 18V
Rise Time
Fall Time
Delay Time
Delay Time
t R
t F
t D1
t D2
19
25
20
40
30
30
30
50
ns
ns
ns
ns
Figure 4-1
Figure 4-1
Figure 4-1
Figure 4-1
Power Supply
Power Supply Current
I S
4.5
mA
V IN = 3V (Both inputs)
Note 1:
Switching times ensured by design.
? 2005 Microchip Technology Inc.
0.4
V IN = 0V (Both inputs)
DS21938A-page 3
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