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参数资料
| 型号： | TC4467EOE |
| 厂商： | Microchip Technology |
| 文件页数： | 10/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR QUAD NAND 16SOIC |
| 标准包装： | 47 |
| 配置： | 低端 |
| 输入类型： | 与非 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 1.2A |
| 配置数： | 4 |
| 输出数： | 4 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
TC4467/TC4468/TC4469
P T = fV s ( 10 × 10 )
A resistive-load-caused dissipation for supply-
referenced loads is a function of duty cycle, load
current and output voltage. The power dissipation is
EQUATION
P L = DV O I L
D = Duty Cycle
EQUATION
– 9
C = 1000 pF Capacitive Load
V S = 15 V
D = 50%
f = 200 kHz
V O = Device Output Voltage
I L = Load Current
Quiescent power dissipation depends on input signal
duty cycle. Logic HIGH outputs result in a lower power
P D =
=
=
=
Package Power Dissipation
P L + P Q + P T
45mW + 35mW + 30mW
110mW
dissipation mode, with only 0.6 mA total current drain
(all devices driven). Logic LOW outputs raise the
current to 4 mA maximum. The quiescent power
dissipation is:
EQUATION
P Q = V S ( D ( I H ) + ( 1 – D ) I L )
I H = Quiescent Current with all outputs LOW
(4 mA max.)
I L = Quiescent Current with all outputs HIGH
(0.6 mA max.)
D = Duty Cycle
Package power dissipation is the sum of load,
quiescent and transition power dissipations. An
example shows the relative magnitude for each term:
Maximum operating temperature is:
EQUATION
T J – θ JA ( P D ) = 141 ° C
T J = Maximum allowable junction temperature
(+150 ° C )
θ JA = Junction-to-ambient thernal resistance
(83.3 ° C/W) 14-pin plastic package
V S = Supply Voltage
Transition power dissipation arises in the complimen-
tary configuration (TC446X) because the output stage
N-channel and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes. The transition power dissipation is
approximately:
V DD
Note:
Ambient operating temperature should not
exceed +85°C for "EJD" device or +125°C
for "MJD" device.
Input: 100 kHz,
1 μF Film
14
0.1 μF Ceramic
square wave,
t RISE = t FALL ≤ 10 nsec
1A
1B
2A
2B
1
2
3
4
13
12
V OUT
470 pF
+5 V
Input
(A, B)
0V
10%
90%
3A
3B
4A
4B
5
6
8
9
11
10
V DD
Output
0V
t D1
90%
10%
t R
t D2
90%
10%
t F
7
FIGURE 4-1:
DS21425B-page 10
Switching Time Test Circuit.
? 2002 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TC4467EOE | 制造商:Microchip Technology Inc 功能描述:IC MOSFET DRVR SOIC16 |
| TC4467EPD | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4467MJD | 功能描述:功率驱动器IC 1.2A Quad NAND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| TC4468 | 制造商:TELCOM 制造商全称:TelCom Semiconductor, Inc 功能描述:LOGIC-INPUT CMOS QUAD DRIVERS |
| TC4468COE | 功能描述:功率驱动器IC 1.2A Quad AND I/P RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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